nanoScanning Auger Microscopy/ Scanning electron microscopy with polarization analysis Scienta Omicron nanoSAM Lab (NANOSAM)

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Guarantor: Petr Bábor, Ph.D.
Technology / Methodology: Probe microscopy & Nanomanipulation
Instrument status: Some Issues Some Issues, 6.5.2024 16:12, The +24V error is still present in SW, but SEM is operational.
Equipment placement: CEITEC Nano - C1.38a
Research group: CF: CEITEC Nano


Description:

The NanoSAM LAB S is a dedicated surface analysis UHV system for high resolution structural and chemical analysis by Scanning Auger Microscopy (SAM), Scanning Electron Microscopy (SEM) and Secondary Electron Microscopy with Polarization Analysis (SEMPA) for the characterization of the magnetic domain structure. The instrument is designed for use together with the UHV Gemini high resolution electron column. It includes Matrix software and electronics for static Auger spectroscopy (AES) and Scanning Auger Microscopy (SAM). In combination with the UHV Gemini, Matrix provides an unsurpassed drift correction technology based on auto-correlation of subsequent SEM images. This opens up the possibility to perform long term AES measurements on very small features with low intensity, or elemental-resolved SAM maps of nanostructures with a low concentration of elements of interest and / or low sensitivity factors. The NanoSAM LAB is equipped with high precision goniometer-mounted four axis UHV stage for the combination of high resolution SEM, SAM and SEMPA, which allows heating up to 750 K. Moreover, the NanoSAM LAB embodies preparation chamber which comprises a manipulator with the possibility of heating the sample to 1500 °C by resistive heating and 900 ° C by radiative heating. The preparation chamber contains 8 flanges for user extensions.


Publications:

  • UKROPCOVÁ, I.; DAO, R.; ŠTUBIAN, M.; KOLÍBAL, M.; ŠIKOLA, T.; WILLINGER, M.; WANG, Z.; ZLÁMAL, J.; BÁBOR, P., 2023: Electron Tractor Beam: Deterministic Manipulation of Liquid Droplets on Solid Surfaces. ADVANCED MATERIALS INTERFACES 10(2), doi: 10.1002/admi.202201963; FULL TEXT
    (NANOSAM, LITESCOPE-LYRA, MIRA-STAN)
  • PEJCHAL, T.; BUKVIŠOVÁ, K.; VALLEJOS VARGAS, S.; CITTERBERG, D.; ŠIKOLA, T.; KOLÍBAL, M., 2022: Ga interaction with ZnO surfaces: Diffusion and melt-back etching. APPLIED SURFACE SCIENCE 583, p. 152475 - 6, doi: 10.1016/j.apsusc.2022.152475; FULL TEXT
    (WITEC-RAMAN, UHV-DEPOSITION, UHV-PREPARATION, NANOSAM, VERIOS, KRATOS-XPS, HELIOS)
  • MANIŠ, J.; MACH, J.; BARTOŠÍK, M.; ŠAMOŘIL, T.; HORÁK, M.; ČALKOVSKÝ, V.; NEZVAL, D.; KACHTÍK, L.; KONEČNÝ, M.; ŠIKOLA, T., 2022: Low temperature 2D GaN growth on Si(111) 7 x 7 assisted by hyperthermal nitrogen ions. NANOSCALE ADVANCES 4(17), p. 1 - 8, doi: 10.1039/d2na00175f; FULL TEXT
    (VERIOS, NANOSAM, TITAN, LYRA, ICON-SPM)
  • UKRAINTSEV, E.; KROMKA, A.; JANSSEN, W.; HAENEN, K.; TAKEUCHI, D.; BÁBOR, P.; REZEK, B., 2021: Electron emission from H-terminated diamond enhanced by polypyrrole grafting. CARBON 176, p. 642 - 8, doi: 10.1016/j.carbon.2020.12.043; FULL TEXT
    (SIMS, NANOSAM)
  • Pejchal, T., 2021: Towards highly-doped Ge and ZnO nanowires: Growth, characterization and doping level analysis. PH.D. THESIS ; FULL TEXT
    (NANOSAM, WITEC-RAMAN, UHV-DEPOSITION, UHV-PREPARATION, VERIOS, KRATOS-XPS, HELIOS, TITAN, ALD, EVAPORATOR, MIRA-EBL, MPS150)

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